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parameter max. units v ds drain- source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 4.5v 5.4 i d @ t a = 70c continuous drain current, v gs @ 4.5v 4.3 a i dm pulsed drain current 40 p d @t a = 25c power dissipation 1.3 p d @t a = 70c power dissipation 0.80 linear derating factor 10 mw/c e as single pulse avalanche energy 33 mj v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range -55 to + 150 c 4/12/04 hexfet power mosfet parameter max. units r ja maximum junction-to-ambient 100 c/w thermal resistance v dss = 20v r ds(on) = 0.030 ? description
www.irf.com 1 trench technology ultra low on-resistance dual n-channel mosfet very small soic package low profile (<1.1mm) available in tape & reel new trench hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the new micro8 ? package has half the footprint area of the standard so-8. this makes the micro8 an ideal device for applications where printed circuit board space is at a premium. the low profile (<1.1mm) of the micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. micro8 ? d 1 d 1 d 2 d 2 g 1 s 2 g 2 s1 top view 8 1 2 3 4 5 6 7 pd-93760c
2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c, i s = 1.3a, v gs = 0v t rr reverse recovery time ??? 19 29 ns t j = 25c, i f = 1.3a q rr reverse recoverycharge ??? 13 20 nc di/dt = 100a/s source-drain ratings and characteristics 40 1.3 when mounted on 1 inch square copper board, t<10 sec s d g starting t j = 25c, l = 2.6mh r g = 25 ? , i as = 5.0a. (see figure 10) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 ??? ??? v v gs = 0v, i d = 250ua ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.01 ??? v/c reference to 25c, i d = 1ma ??? ??? 0.030 v gs = 4.5v, i d = 5.4a ??? ??? 0.045 v gs = 2.5v, i d = 4.6a v gs(th) gate threshold voltage 0.60 ??? 1.2 v v ds = v gs , i d = 250a g fs forward transconductance 13 ??? ??? s v ds = 10v, i d = 5.4a ??? ??? 1.0 v ds = 16v, v gs = 0v ??? ??? 25 v ds = 16v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? 100 v gs = 12v gate-to-source reverse leakage ??? ??? -100 v gs = -12v q g total gate charge ??? 18 26 i d = 5.4a q gs gate-to-source charge ??? 3.4 5.1 nc v ds = 16v q gd gate-to-drain ("miller") charge ??? 3.4 5.1 v gs = 4.5v t d(on) turn-on delay time ??? 8.5 ??? v dd = 10v t r rise time ??? 11 ??? i d = 1.0a t d(off) turn-off delay time ??? 36 ??? r g = 6.0 ? t f fall time ??? 16 ??? r d = 10 ? c iss input capacitance ??? 1310 ??? v gs = 0v c oss output capacitance ??? 180 ??? pf v ds = 15v c rss reverse transfer capacitance ??? 150 ??? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current pulse width 400s; duty cycle 2%
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 5.0a 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 7.00v 5.00v 4.50v 3.50v 3.00v 2.70v 2.50v 2.25v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.25v 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 7.00v 5.00v 4.50v 3.50v 3.00v 2.70v 2.50v 2.25v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.25v 10 100 2.0 2.5 3.0 3.5 4.0 4.5 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 5 10 15 20 25 30 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 5.0a v = 4v ds v = 10v ds v = 16v ds 1 10 100 0.5 1.0 1.5 2.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 0 400 800 1200 1600 2000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 t , case temperature ( c) i , drain current (a) c d 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10. maximum avalanche energy vs. drain current 25 50 75 100 125 150 0 20 40 60 80 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 2.2a 4.0a 5.0a
6 www.irf.com fig 13. on-resistance vs. drain current fig 12. on-resistance vs. gate voltage 2.0 3.0 4.0 5.0 6.0 7.0 v gs, gate -to -source voltage ( v ) 0.01 0.02 0.03 0.04 r d s ( o n ) , d r a i n - t o - s o u r c e v o l t a g e ( ? ) id = 5.0a 0 10 20 30 40 0.02 0.04 0.06 0.08 0.10 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) vgs = 4.5v vgs= 2.5v i d , drain current (a)
www.irf.com 7 micro8 ? package outline dimensions are shown in millimeters (inches) inches millimeters min max min max a 0.10 (.004) 0.25 (.010) m a m h 1 2 3 4 8 7 6 5 d - b - 3 3 e - a - e 6x e 1 - c - b 8x 0.08 (.003) m c a s b s a 1 l 8x c 8x n otes: 1 dimensioning and tolerancing per ansi y14.5m-1982. 2 controlling dimension : inch. 3 dimensions do not include mold flash. a .036 .044 0.91 1.11 a1 .004 .008 0.10 0.20 b .010 .014 0.25 0.36 c .005 .007 0.13 0.18 d .116 .120 2.95 3.05 e .0256 basic 0.65 basic e1 .0128 basic 0.33 basic e .116 .120 2.95 3.05 h .188 .198 4.78 5.03 l .016 .026 0.41 0.66 0 6 0 6 dim lead assignments single dual d d d d d1 d1 d2 d2 s s s g s1 g1 s2 g2 1 2 3 4 1 2 3 4 8 7 6 5 8 7 6 5 recommended footprint 1.04 ( .041 ) 8x 0.38 ( .015 ) 8x 3.20 ( .126 ) 4.24 ( .167 ) 5.28 ( .208 ) 0.65 ( .0256 ) 6x micro8 ? part marking information

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8 www.irf.com micro8 ? tape & reel information dimensions are shown in millimeters (inches) 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) n otes: 1 . outline conforms to eia-481 & eia-541. 2 . controlling dimension : millimeter. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 04/04 this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site.

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